1N65L-TN3-K(2011) データシートの表示（PDF） - Unisonic Technologies

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1N65L-TN3-K
(Rev.:2011)

1.2A, 650V N-CHANNEL POWER MOSFET

Unisonic Technologies 

1N65

Power MOSFET

„ ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS VGS=0V, ID=250μA

Drain-Source Leakage Current

Gate-Source Leakage Current

Forward

Reverse

Breakdown Voltage Temperature Coefficient

ON CHARACTERISTICS

IDSS

VDS=650V, VGS=0V

IGSS

VGS=30V, VDS=0V

VGS=-30V, VDS=0V

△BVDSS/△TJ ID=250μA

Gate Threshold Voltage

Static Drain-Source On-State Resistance

DYNAMIC CHARACTERISTICS

VGS(TH)

RDS(ON)

VDS=VGS, ID=250μA

VGS=10V, ID=0.6A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

CISS

COSS

CRSS

VDS=25V, VGS=0V,

f=1MHz

Turn-On Delay Time

tD(ON)

Turn-On Rise Time

tR

VDD=325V, ID=1.2A,

Turn-Off Delay Time

tD(OFF)

RG=50Ω (Note 2,3)

Turn-Off Fall Time

tF

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

QG

QGS

QGD

VDS=520V, VGS=10V,

ID=1.2A (Note 2,3)

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

Maximum Continuous Drain-Source Diode

Forward Current

VSD

VGS=0V, IS =1.2A

IS

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Reverse Recovery Time

trr

VGS=0V, IS=1.2A

Reverse Recovery Charge

QRR

dIF/dt=100A/μs (Note 1)

Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%

3. Essentially Independent of Operating Temperature

MIN TYP MAX UNIT

650

V

10 μA

100 nA

-100 nA

0.4

V/℃

2.0

4.0 V

9.5 12.5 Ω

120 150 pF

20 25 pF

3.0 4.0 pF

5 20 ns

25 60 ns

7 25 ns

25 60 ns

5.0 6.0 nC

1.0

nC

2.6

nC

1.4 V

1.2 A

4.8 A

160

ns

0.3

μC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R502-579.B

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