1N65AL-TN3-B データシートの表示（PDF） - Unisonic Technologies

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1N65AL-TN3-B

0.5A, 650V N-CHANNEL POWER MOSFET

Unisonic Technologies 

1N65A

Power MOSFET

 ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS VGS = 0V, ID = 250μA

650

V

Drain-Source Leakage Current

IDSS

VDS = 650V, VGS = 0V

10 μA

Gate-Source Leakage Current

Forward

Reverse

IGSS

VGS = 20V, VDS = 0V

VGS = -20V, VDS = 0V

100 nA

-100 nA

Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID =250mA,referenced to 25°C

0.4

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250μA

2.0

4.5 V

Static Drain-Source On-State Resistance

RDS(ON) VGS = 10V, ID = 0.5A

11.5 15.5 Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

CISS

COSS

CRSS

VDS=25V, VGS=0V,

f=1MHz

100 pF

20 pF

3 pF

SWITCHING CHARACTERISTICS

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

QG

QGS

QGD

tD (ON)

tR

tD (OFF)

tF

VDS=520V, VGS=10V,

ID=0.8A (Note 1,2)

VDD=325V, ID=0.5A,

RG=5Ω (Note 1,2)

8 10 nC

1.8

nC

4.0

nC

12 34 ns

11 32 ns

40 90 ns

18 46 ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Continuous Drain-Source Diode

Forward Current

IS

1.2 A

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

4.8 A

Drain-Source Diode Forward Voltage

VSD

Reverse Recovery Time

trr

Reverse Recovery Charge

QRR

Note: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

2. Essentially independent of operating temperature

VGS=0V, ISD = 1.2A

VGS=0V, ISD = 1.2A

di/dt = 100A/μs

1.6 V

136

ns

0.3

μC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

4 of 9

QW-R502-584.D

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