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1N6742 データシートの表示(PDF) - Microsemi Corporation

部品番号
コンポーネント説明
メーカー
1N6742
Microsemi
Microsemi Corporation Microsemi
1N6742 Datasheet PDF : 2 Pages
1 2
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
1N6742, R
PRELIMINARY
Features
Passivated mesa structure for very low leakage currents
Hermetically sealed, low profile ceramic surface mount power package
Low package inductance
5000 Watts peak power
Very low thermal resistance
Available as standard polarity (strap-to-anode) and
reverse “R” polarity (strap-to-cathode)
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
Peak Power Dissipation
tclamping :0 volts to VBR min (theoretical)
Forward Surge Rating, 1/120 sec @25°C
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case:
SYMBOL
Ppp
IFSM
Tj
Tstg
θJC
17 Volts
200 Amps
5KW
TRANSIENT
VOLTAGE
SUPPRESOR
MAX.
5000
<1
200
-65 to +175
-65 to +175
0.65
UNIT
Watts
picosecond
Amps
°C
°C
°C/W
Mechanical Outline
Slugger1 (DO-217AA)
Datasheet# MSC1328.PDF
Note: Polarity symbol shown
Applies to 1N6742.

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