28F002BL-T データシートの表示（PDF） - Intel

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28F002BL-T

2-MBIT (128K x 16, 256K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY

Intel 

28F200BL-T B 28F002BL-T B

Revision History

Number

Description

-001 Original Version

-002

-003

Modified BYTE AC Timings

Modified tDVWH parameter for AC Characteristics for Write Operations

PWD renamed to RP for JEDEC standardization compatibility

Combined VCC Read Current for 28F200BX-L Word-Wide and Byte-Wide Mode and

28F002BX-L Byte-Wide Mode in DC Characteristics tables

Changed IPPS current spec from g10 mA to g15 mA in DC Characteristics table

Added Boot Block Unlock current spec in DC Characteristics tables

Improved tPWH spec to 600 ns (was 700 ns)

Changed ICCR current spec from 20 mA maximum to 25 mA maximum and added typical spec

to DC Characteristics table

-004

Added IOH CMOS Specification

Expanded temperature operating range from 0 C – 70 C to b20 – a70 C

Product naming changed

28F200BX-TL BL changed to 28F200BL-T B

28F002BX-TL BL changed to 28F002BL-T B

Typographical errors corrected

Added 28F400BX interface to Intel386TM EX Embedded Processor Block Diagram

Added upgrade considerations for SmartVoltage Boot Block products

Previously specified VCC tolerance of 3 0V to 3 6V for Read Program and Erase has been

changed to 3 15V to 3 6V for Program and Erase operation while the Read operation remains

3 0V to 3 6V

-005

-006

Typographical errors corrected

VCC Lockout voltage changed from 2 0V to 1 7V

Added input rise fall time specifications

42

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