CGY1032_ データシートの表示（PDF） - NXP Semiconductors.

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CGY1032_

RF Manual 16th edition

NXP Semiconductors. 

7. Abbreviations

3-way

AM

ASIC

ASYM

BPF

BUC

CATV

CDMA

CMMB

CMOS

CQS

DAB

DECT

DiSEqC

DSB

DVB

EDGE

ESD

FET

FM

GaAs

GaN

Gen

GPS

GSM

HBT

HDTV

HF

HFC

HFET

HPA

HVQFN

IF

ISM

LDMOS

LNA

LNB

LO

LPF

MESFET

MMIC

MMPP

Doherty design using 3 discrete transistors

Amplitude Modulation

Application Specific Integrated Circuit

Asymmetrical design of Doherty (main and

peak device are different)

Band Pass Filter

Block Upconverter

Community Antenna Television

Code Division Multiple Access

Chinese Multimedia Mobile Broadcasting

Complementary Metal Oxide Semiconductor

Customer Qualification Samples

Digital Audio Broadcasting

Digital Enhanced Cordless

Telecommunications

Digital Satellite Equipment Control

Digital Signal Processor

Digital Video Broadcasting

Enhanced Data Rates for GSM Evolution

Electro Static Device

Field Effect Transistor

Frequency Modulation

Gallium Arsenide

Gallium Nitride

Generation

Global Positioning System

Global System for Mobile communications

Heterojunction Bipolar Transistor

High Definition Television

High Frequency (3-30 MHz)

Hybrid Fiber Coax

Heterostructure Field Effect Transistor

High Power Amplifier

Plastic thermally enHanced Very thin Quad

Flat pack No leads

Intermediate Frequency

Industrial, Scientific, Medical - reserved

frequency bands

Laterally Diffused Metal-Oxide-Semiconductor

Low Noise Amplifier

Low Noise Block

Local Oscillator

Low Pass Filter

Metal Semiconductor Field Effect Transistor

Monolithic Microwave Integrated Circuit

Main and peak devices realized separately in

halves of push-pull transistor

MPPM

MoCA

MOSFET

MPA

MRI

NF

NIM

NMR

PA

PAR

PEP

pHEMT

PLL

QUBiC

RF

RFS

RoHS

Rx

SARFT

SER

SiGe:C

SMATV

SMD

SPDT

SYM

TD-SCDMA

TCAS

TMA

TTFF

Tx

UHF

UMTS

VCO

VGA

VHF

VoIP

VSAT

WCDMA

WiMAX

WLAN

Main and peak device realized in same push-

pull transistor (2 times)

Multimedia over Coax Alliance

Metal–Oxide–Semiconductor Field Effect

Transistor

Medium Power Amplifier

Magnetic Resonance Imaging

Noise Figure

Network Interface Module

Nuclear Magnetic Resonance

Power Amplifier

Peak to Average Ratio

Peak Envelope Power

pseudomorphic High Electron Mobility

Transistor

Phase Locked Loop

Quality BiCMOS

Radio Frequency

Release for Supply

Restriction of Hazardous Substances

Receive

State Administration for Radio, Film and

Television

Serializer

Sillicon Germanium Carbon

Satellite Master Antenna Television

Surface Mounted Device

Single Pole, Double Throw

Symmetrical design of Doherty (main and peak

device are the same type of transistor)

Time Division-Synchronous Code Division

Multiple Access

Traffic Collision Avoidance Systems

Tower Mounted Amplifier

Time to First Fix

Transmit

Ultra High Frequency (470-860 MHz)

Universal Mobile Telecommunications System

Voltage Controlled Oscillator

Variable Gain Amplifier

Very High Frequency (30-300 MHz)

Voice over Internet Protocol

Very Small Aperture Terminal

Wideband Code Division Multiple Access

Worldwide Interoperability for Microwave

Access

Wireless Local Area Network

124

NXP Semiconductors RF Manual 16th edition

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