JMnic
Silicon NPN Power Transistors
Product Specification
2N6674 2N6675
DESCRIPTION
·With TO-3 package
·High voltage,high speed
APPLICATIONS
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Deflection circuits
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2N6674
2N6675
Open emitter
VCEO
Collector-emitter voltage
2N6674
2N6675
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current
IB
Base current
PT
Total Power Dissipation
Tj
Junction temperature
Ta=25℃
TC=25℃
Tstg
Storage temperature
VALUE
450
650
300
400
7
15
5
6
175
200
-65~200
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
1.0
UNIT
℃/W