2SA1063 データシートの表示（PDF） - Inchange Semiconductor
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2SA1063 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-4A ;IB=B -0.4A
VBE
Base-emitter on voltage
IC=-4A;VCE=-5V
ICBO
Collector cut-off current
VCB=-150V; IE=0
IEBO
Emitter cut-off current
VEB=-3V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-4A ; VCE=-5V
fT
Transition frequency
IC=-0.5A ; VCE=-5V
hFE-1 Classifications
R
Q
P
O
40-80 60-120 90-180 140-280
Product Specification
2SA1063
MIN TYP. MAX UNIT
-150
V
-2.0
V
-1.8
V
-50
μA
-50
μA
40
280
20
50
MHz
2
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