2SB1209(2002) データシートの表示（PDF） - Panasonic Corporation
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2SB1209 Datasheet PDF : 3 Pages
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Transistors
2SB1209
Silicon PNP triple diffusion planar type
For low-frequency amplification
■ Features
• High collector-base voltage (Emitter open) VCBO
• High collector-emitter voltage (Base open) VCEO
• Low collector-emitter saturation voltage VCE(sat)
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
−400
V
Collector-emitter voltage (Base open) VCEO
−400
V
Emitter-base voltage (Collector open) VEBO
−5
V
Collector current
IC
−100
mA
Peak collector current
ICP
−200
mA
Collector power dissipation *
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
Note) *: Print circuit board: Copper foil area of 1 cm2 or more, and the board
thickness of 1.7 mm for the collector portion
6.9±0.1
(1.5)
(1.5)
R 0.7
R 0.9
Unit: mm
2.5±0.1
(1.0)
(0.85)
0.55±0.1
0.45±0.05
3
2
1
(2.5) (2.5)
1: Base
2: Collector
3: Emitter
M-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = −100 µA, IE = 0
−400
V
Collector-emitter voltage (Base open) VCEO IC = −500 µA, IB = 0
−400
V
Emitter-base voltage (Collector open) VEBO IE = −100 µA, IC = 0
−5
V
Forward current transfer ratio
hFE VCE = −5 V, IC = −30 mA
40
Collector-emitter saturation voltage
VCE(sat) IC = −10 mA, IB = −1 mA
− 0.6 V
Base-emitter saturation voltage
VBE(sat) IC = −50 mA, IB = −5 mA
−1.5
V
Transition frequency
fT
VCB = −30 V, IE = 20 mA, f = 200 MHz
50
MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = −30 V, IE = 0, f = 1 MHz
9
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2002
SJC00070BED
1
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