2SB1370 データシートの表示（PDF） - Inchange Semiconductor
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2SB1370 Datasheet PDF : 2 Pages
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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB1370
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= -50μA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -50μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= -2A; IB= -0.2A
ICBO
Collector Cutoff Current
VCB= -60V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE
DC Current Gain
IC= -0.5A; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC=-0.5A; VCE= -5V; ftest= 5MHz
MIN TYP. MAX UNIT
-60
V
-60
V
-5
V
-1.5 V
-1.5 V
-10 μA
-10 μA
100
320
15
MHz
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