2SB1308-P(2011) データシートの表示（PDF） - Micro Commercial Components

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2SB1308-P
(Rev.:2011)

PNP Plastic-Encapsulate Transistors

Micro Commercial Components 

MCC

TM

Micro Commercial Components

 omponents

20736 Marilla Street Chatsworth



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Features

• Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

• Epoxy meets UL 94 V-0 flammability rating

• Moisure Sensitivity Level 1

• Power dissipation: PCM = 0.5W(Tamb=25ć)

• Collector current: ICM = -3A

• Collector-base voltage: V(BR)CBO = -30V

• Operating and storage junction temperature range

TJ, Tstg: -55ć to + 150ć

Electrical Characteristics @ 25к Unless Otherwise Specified

Symbol

Parameter

Min Typ Max Unit

VCEO

VCBO

VEBO

ICBO

IEBO

hFE

VCE(sat)

fT

Collector-Emitter Voltage

(IC=-50­A, IE=0)

Collector-Base Voltage

(IC=-1mA, IB=0)

Emitter-Base Voltage

(IE=-50­A, IC=0)

Collector cut-off Current

(VCB=-20V, IE=0)

Emitter cut-off Current

(VEB=-5V, IC=0)

DC current gain

(VCE=-2V, IC=-0.5A)

Collector-Emitter Saturation Voltage

(IC=-1.5A, IB=-0.15A)

Transition Frequency

(VCE=-6.0Vdc, IC=-50Adc,f=30MHz)

-20 --- ---

V

-30 --- ---

V

-6.0 --- ---

V

---

--- -0.5 ­A

---

--- -0.5 ­A

82

--- 390

---

---

--- -0.45 V

50

--- ---

MHz

CLASSIFICATION OF hFE

Rank

P

Range

82-180

Marking

BFP

Q

120-270

BFQ

R

180-390

BFR

2SB1308-P

2SB1308-Q

2SB1308-R

PNP

Plastic-Encapsulate

Transistors

SOT-89

A

B

K

E

C

D

G

H

J

F

1

2

3

1.BASE

2.COLLECTOR

3.EMITTER























 






 

























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2011/01/01

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