C1096 データシートの表示（PDF） - Inchange Semiconductor

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C1096

2SC1034 / Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC1096

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.3A

2.0

V

VBEsat Base-emitter saturation voltage

IC=3A ;IB=0.3A

2.0

V

V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0

ICBO

Collector cut-off current

VCB=30V;IE=0

IEBO

Emitter cut-off current

VEB=3V; IC=0

30

V

1.0 μA

1.0 μA

hFE-1

DC current gain

IC=20mA ; VCE=5V

20

hFE-2

DC current gain

IC=1.0A ; VCE=5V

40

250

COB

Output capacitance

固I电NC半H导A体NGE SEMICONDUCTOR fT

Transition frequency

IE=0; VCB=10V;f=1.0MHz

IC=0.1A ; VCE=5V

‹ hFE-1 classifications

N

M

L

K

40-60 50-100 80-160 120-250

55

pF

65

MHz

2

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