Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3148
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
800
V
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
900
V
VCEsat Collector-emitter saturation voltage IC=0.8A; IB=0.16A
0.6
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IC=0.8A; IB=0.16A
VCB=800V ;IE=0
1.2
V
100 μA
IEBO
Emitter cut-off current
VEB=7V; IC=0
1
mA
hFE
DC current gain
IC=0.8A ; VCE=5V
10
固IN电C半H导AN体GE SEMICONDUCTOR Switching times
tr
Rise time
tstg
Storage time
tf
Fall time
VCC≈400V; IC=0.8A
IB1=0.08A;IB2=-0.20A;
RL=50Ω;Duty cycle≤1%
1.0
μs
4.0
μs
1.0
μs
2