2SC3284 データシートの表示（PDF） - Inchange Semiconductor
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2SC3284 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=5A IB=0.5A
ICBO
Collector cut-off current
VCB=150V IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=5A ; VCE=4V
Cob
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IE=-2A ; VCE=12V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A;RL=12Ω
IB1=- IB2=0.5A
VCC=60V
hFE Classifications
O
P
Y
50-100 70-140 90-180
Product Specification
2SC3284
MIN TYP. MAX UNIT
150
V
2.0
V
100 μA
100 μA
50
180
200
pF
60
MHz
0.20
μs
1.50
μs
0.35
μs
2
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