2SC3457 データシートの表示（PDF） - Inchange Semiconductor
部品番号
コンポーネント説明
メーカー
2SC3457 Datasheet PDF : 4 Pages
| |||
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3457
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=∞
800
V
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
1100
V
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IB=0
7
V
VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3A
2.0
V
VBEsat Base-emitter saturation voltage
IC=1.5A; IB=0.3A
1.5
V
ICBO
Collector cut-off current
VCB=800V ;IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=0.2A ; VCE=5V
10
40
hFE-2
DC current gain
IC=1A ; VCE=5V
8
固IN电C半H导AN体GE SEMICONDUCTOR fT
Transition frequency
COB
Output capacitance
Switching times
ton
Turn-on time
tstg
Storage time
IC=0.2A ; VCE=10V
f=1MHz ; VCB=10V
VCC=400V; IC=2A
IB1=0.4A;IB2=-0.8A;
15
MHz
60
pF
0.5
μs
3.0
μs
RL=200Ω
tf
Fall time
0.3
μs
hFE-1 classifications
K
L
10-20
15-30
M
20-40
2
Share Link: 