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2SC4541 データシートの表示(PDF) - Toshiba
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2SC4541
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
Toshiba
2SC4541 Datasheet PDF : 5 Pages
1
2
3
4
5
4
60
3
2
1
I
C
– V
CE
50
40
30
20
15
Common emitter
Ta
=
25°C
10
IB
=
5 mA
0
0
0
1
2
3
4
5
Collector-emitter voltage V
CE
(V)
V
CE (sat)
– I
C
10
Common emitter
3
IC/IB
=
20
1
0.3
0.1
Ta
=
100°C
0.03
0.01
1
25
−
25
3
10 30 100 300 1000 3000
Collector current I
C
(mA)
2SC4541
h
FE
– I
C
1000
300
Ta
=
100°C
100
25
30
−
25
10
3
Common emitter
VCE
=
2 V
1
1
3
10 30 100 300 1000 3000
Collector current I
C
(mA)
V
BE (sat)
– I
C
100
Common emitter
30
IC/IB
=
20
10
3
Ta
= −
25°C
1
0.3
25
100
0.1
1
3
10 30 100 300 1000 3000
Collector current I
C
(mA)
3
2004-07-07
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