2SC4596 データシートの表示（PDF） - SavantIC Semiconductor
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2SC4596 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4596
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=50µA , IC=0
VCEsat-1 Collector-emitter saturation voltage IC=3A, IB=0.15A
VCEsat-2 Collector-emitter saturation voltage IC=4A, IB=0.2A
VBEsat-1 Base-emitter saturation voltage
IC=3A, IB=0.15A
VBEsat-2 Base-emitter saturation voltage
IC=4A, IB=0.2A
ICBO
Collector cut-off current
VCB=100V, IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=1A ; VCE=2V
Cob
Output capacitance
IE=0 ; VCB=10V,f=1MHz
fT
Transition frequency
IC=0.5A ; VCE=10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=3A ; RL=10@
IB1= IB2=0.15A
VCCA30V
MIN TYP. MAX UNIT
60
V
5
V
0.3
V
0.5
V
1.2
V
1.5
V
10
µA
10
µA
60
320
80
pF
120
MHz
0.3
µs
1.5
µs
0.3
µs
hFE Classifications
D
E
F
60-120 100-200 160-320
2
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