2SC5018(2003) データシートの表示（PDF） - Panasonic Corporation
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2SC5018 Datasheet PDF : 3 Pages
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Transistors
2SC5018
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
■ Features
• High collector-base voltage (Emitter open) VCBO
• High collector-emitter voltage (Base open) VCEO
6.9±0.1
0.7 4.0
0.65 max.
Unit: mm
2.5±0.1
(0.8)
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
500
V
Collector-emitter voltage (Base open) VCEO
400
V
Emitter-base voltage (Collector open) VEBO
7
V
Collector current
Peak collector current *1
Collector power dissipation *2
IC
0.8
A
ICP
1.5
A
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
Note) *1: Pulse width: t = 10 ms
*2: Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness
0.45+–00..0150
2.5±0.5
1.05±0.05
2.5±0.5
0.45+–00..0150
123
1: Emitter
2: Collector
3: Base
MT-2-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base cutoff current (Emitter open) ICBO VCB = 500 V, IE = 0
100 µA
Emitter-base cutoff current (Collector open) IEBO VEB = 7 V, IC = 0
100 µA
Forward current transfer ratio
hFE1 VCE = 5 V, IC = 10 mA
50
300
hFE2 * VCE = 5 V, IC = 300 mA
10
Collector-emitter saturation voltage * VCE(sat) IC = 100 mA, IB = 10 mA
0.1 0.5
V
Base-emitter saturation voltage *
VBE(sat) IC = 100 mA, IB = 10 mA
0.8 1.0
V
Transition frequency
fT
VCB = 10 V, IE = −50 mA, f = 10 MHz
20
MHz
Turn-on time
ton
IC = 200 mA, IB1 = 40 mA
0.7
µs
Storage time
tstg
IB2 = −40 mA, VCC = 150 V
4.0
µs
Fall time
tf
0.4
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Publication date: February 2003
SJC00173CED
1
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