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2SC5713 データシートの表示(PDF) - Toshiba
部品番号
コンポーネント説明
メーカー
2SC5713
Silicon NPN Epitaxial Type Transistor
Toshiba
2SC5713 Datasheet PDF : 5 Pages
1
2
3
4
5
I
C
– V
CE
6
Common emitter
Ta
=
25°C
Single nonrepetitive pulse
5
25
20
15
4
10
3
8
6
2
4
1
IB
=
2 mA
0
0
0.4
0.8
1.2
1.6
2
2.4
Collector-emitter voltage V
CE
(V)
V
CE (sat)
– I
C
1
Common emitter
IC/IB
=
50
Single nonrepetitive pulse
0.1
Ta
=
100°C
−
55°C
25°C
0.01
0.001
0.001
0.01
0.1
1
10
Collector current I
C
(A)
2SC5713
10000
Common emitter
VCE
=
2 V
Single nonrepetitive
pulse
h
FE
– I
C
1000
Ta
=
100°C
25°C
−
55°C
100
10
0.001
0.01
0.1
1
10
Collector current I
C
(A)
V
BE (sat)
– I
C
10
Common emitter
IC/IB
=
50
Single nonrepetitive
pulse
1
Ta
= −
55°C
25°C
100°C
0.1
0.001
0.01
0.1
1
10
Collector current I
C
(A)
I
C
– V
BE
5
Common emitter
VCE
=
2 V
Single nonrepetitive pulse
4
3
Ta
=
100°C
2
1
−
55°C
25°C
0
0
0.4
0.8
1.2
1.6
Base-emitter voltage V
BE
(V)
3
2006-11-10
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