Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=200mA; IC=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.6A
VBEsat Base-emitter saturation voltage
IC=2A; IB=0.6A
ICBO
Collector cut-off current
VCB=1500V; IE=0
hFE
DC current gain
IC=0.3A ; VCE=5V
VF
Diode forward voltage
IF=2.5A
Product Specification
2SD1452
MIN TYP. MAX UNIT
6
V
5.0
V
1.5
V
0.5 mA
6
2.2
V
2