2SD1457A データシートの表示（PDF） - Inchange Semiconductor
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2SD1457A Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1457 2SD1457A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2SD1457
2SD1457A
IC=2A ;L=10mH
V(BR)EBO Emitter-base breakdown voltage
IE=0.1A ;IC=0
VCEsat Collector-emitter saturation voltage IC=3A ;IB=60mA
VBEsat Base-emitter saturation voltage
IC=3A ;IB=60mA
ICBO
Collector cut-off current
VCB=200V; IE=0
hFE
DC current gain
IC=2A ; VCE=2V
fT
Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
hFE Classifications
Q
P
O
700-2500 2000-5000 4000-10000
MIN TYP. MAX UNIT
150
V
200
5
V
1.5
V
2.5
V
100 μA
700
10000
15
MHz
2
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