SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1454
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=200mA; IC=0
VCEsat Collector-emitter saturation voltage IC=3.5A; IB=1A
VBEsat
Base-emitter saturation voltage
ICBO
Collector cut-off current
hFE
DC current gain
VF
Diode forward voltage
IC=3.5A; IB=1A
VCB=1500V; IE=0
IC=1A ; VCE=5V
IF=4A
MIN TYP. MAX UNIT
6
V
5.0
V
1.5
V
0.5 mA
6
2.2
V
2