D1366A データシートの表示（PDF） - TY Semiconductor

部品番号

コンポーネント説明

メーカー

D1366A

Silicon NPN Epitaxial

TY Semiconductor 

■ Features

● Low frequency power amplifier

Product specification

2SD1366A

SOT-89

4.50±0.1

1.80±0.1

123

0.48±0.1

0.53±0.1

Unit:mm

1.50 ±0.1

0.44±0.1

3.00±0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Collector-base voltage

VCBO

Collector-emitter voltage

VCEO

Emitter-base voltage

VEBO

Collector current

IC

Total power dissipation

PC*

Junction temperature

Tj

Storage temperature

Tstg

* Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)

Rating

30

25

5

1

1

150

-55 to +150

■ Electrical Characteristics Ta = 25℃

Parameter

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current gain

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Output Capacitance

■ hFE Classification

Marking

hFE

AC

82～180

AD

120～240

Symbol

Test conditons

V(BR)CBO IC = 10 μA, IE = 0

V(BR)CEO IC = 1 mA, IB = 0

V(BR)EBO IE = 10 μA, IC = 0

ICBO VCB = 250V,IB=0

IEBO VEB = 4 V, IC = 0

hFE VCE =2V,Ic=500mA

VCE(sat) IC = 0.8 A, IB = 80mA

VBE(sat) IC = 0.8 A, IB = 80mA

fT VCE = 2V ,Ic=500mA

Cob VCB = 10 V, IE = 0, f = 1.0 MHz

Unit

V

V

V

A

W

℃

℃

Min Typ Max Unit

30

V

25

V

5

V

0.1 μA

0.1 μA

85

240

0.3 V

1

V

240

MHz

22

pF

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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