D1518 データシートの表示（PDF） - Inchange Semiconductor

部品番号

コンポーネント説明

メーカー

D1518

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD1518

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A

VBE(sat) Base-Emitter Saturation Voltage

IC= 2.5A; IB= 0.5A

ICBO

Collector Cutoff Current

VCB= 900V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 7V; IC= 0

hFE-1

DC Current Gain

IC= 10mA ; VCE= 5V

hFE-2

DC Current Gain

IC= 0.6A; VCE= 5V

fT

Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V

COB

Output Capacitance

tf

Fall Time

IE= 0; VCB= 10V; ftest= 1.0MHz

IC= 2.5A; IB1= 0.5A; IB2= -1A

MIN TYP. MAX UNIT

5.0

V

1.5

V

1.0 mA

1.0 mA

8

10

40

5

MHz

75

pF

0.5 μs

isc Website：www.iscsemi.cn

2

Share Link: