D1530 データシートの表示（PDF） - Inchange Semiconductor
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D1530 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1530
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
80
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.1A
VBE(sat)
Base-Emitter Saturation Voltage
IC= 2A; IB=B 0.1A
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
0.5
V
1.2
V
10 μA
50 μA
hFE-1
DC Current Gain
IC= 0.1A; VCE= 2V
45
www.iscsemi.cn hFE-2
DC Current Gain
IC= 1A; VCE= 2V
60
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V; f= 10MHz
Switching times
ton
Turn-on Time
25
tstg
Storage Time
IC= 2A; IB1= -IB2= 0.1A;
VCC= 50V
tf
Fall Time
260
MHz
0.5 μs
1.5 μs
0.5 μs
hFE-2 classifications
R
Q
P
60-120 90-180 130-260
isc Website：www.iscsemi.cn
2
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