D1531 データシートの表示（PDF） - Inchange Semiconductor

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D1531

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD1531

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CBO Collector-Base Breakdown Voltage

IC= 1mA; IE= 0

50

V

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 2mA; IB=B 0

40

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.3A

1.0

V

VBE(sat) Base-Emitter Saturation Voltage

IC= 2A; IB=B 0.2A

1.5

V

ICBO

Collector Cutoff Current

VCB= 50V; IE= 0

1.0 μA

ICEO

IEBO

hFE

fT

www.iscsemi.cn Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Current-Gain—Bandwidth Product

VCE= 10V; IB=B 0

VEB= 5V; IC= 0

IC= 1A; VCE= 5V

IC= 0.5A; VCE= 5V

50

150

100

10

220

μA

μA

MHz

COB

Collector Output Capacitance

IE= 0; VCB= 20V; f= 1MHz

20

pF

‹ hFE Classifications

P

Q

R

50-100 80-160 120-220

isc Website：www.iscsemi.cn

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