Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A , IB=0
VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A
VBEsat Base-emitter saturation voltage
IC=4A; IB=0.8A
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
VCB=800V; IE=0
VEB=5V; IC=0
IC=1A ; VCE=5V
fT
Transition frequency
IC=0.1A ; VCE=10V
COB
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
Product Specification
2SD1551
MIN TYP. MAX UNIT
600
V
5.0
V
1.5
V
10 μA
10 μA
8
3
MHz
165
pF
2