D1555 データシートの表示（PDF） - SavantIC Semiconductor

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D1555

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD1555

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Emitter-base breakdown voltage

IE=0.2A , IC=0

VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A

VBEsat

Base-emitter saturation voltage

IC=4A; IB=0.8A

ICBO

Collector cut-off current

VCB=500V; IE=0

hFE

DC current gain

fT

Transition frequency

COB

Collector output capacitance

VF

Diode forward voltage

tf

Fall time

IC=1A ; VCE=5V

IC=0.1A ; VCE=10V

IE=0 ; VCB=10V;f=1MHz

IF=5A

ICP=4A ;IB1(end)=0.8A

MIN TYP. MAX UNIT

5

V

3.0 5.0

V

1.5

V

10

µA

8

3

MHz

165

pF

2.0

V

0.5 1.0

µs

2

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