2SD1849 データシートの表示（PDF） - SavantIC Semiconductor

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2SD1849

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD1849

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Emitter-base breakdown voltage

IE=500mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=6A; IB=1.4A

VBEsat

Base-emitter saturation voltage

IC=6A; IB=1.4A

ICBO

Collector cut-off current

VCB=750V; IE=0

VCB=1500V; IE=0

hFE-1

DC current gain

IC=1A ; VCE=5V

hFE-2

DC current gain

IC=6A ; VCE=10V

fT

Transition frequency

IC=1A ; VCE=10V;f=0.5MHz

VF

Diode forward voltage

IC=7A

MIN TYP. MAX UNIT

7

V

8.0

V

1.5

V

10

µA

1.0

mA

5

25

4

2

MHz

2.0

V

2

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