2SD673 データシートの表示（PDF） - Inchange Semiconductor
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2SD673 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2SD673
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A
VBE(on) Base-Emitter On Voltage
IC= 1A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 5A; VCE= 5V
MIN TYP. MAX UNIT
100
V
5
V
3.0
V
1.5
V
1
mA
60
200
20
hFE-1 Classifications
B
C
60-120 100-200
isc Website：www.iscsemi.cn
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