2SJ312 データシートの表示（PDF） - Toshiba
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2SJ312 Datasheet PDF : 6 Pages
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Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = −60 V, VGS = 0 V
ID = −10 mA, VGS = 0 V
VDS = −10 V, ID = −1 mA
VGS = −4 V, ID = −5 A
VGS = −10 V, ID = −7 A
VDS = −10 V, ID = −7 A
VDS = −10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Turn−on time
ton
Switching time
Fall time
tf
Turn-off time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
toff
Qg
Qgs
VDD ≈ −48 V, VGS = −10 V, ID = −14 A
Qgd
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
―
―
IDR = −14 A, VGS = 0 V
IDR = −14 A, VGS = 0 V
dIDR / dt = 50 A / µs
Marking
2SJ312
Min Typ. Max Unit
―
―
±10
µA
―
― −100 µA
−60
―
―
V
−0.8
― −2.0
V
―
130 190
mΩ
―
80
120
5.0
8.0
―
S
― 1200 ―
―
220
―
pF
―
550
―
―
20
―
―
30
―
ns
―
25
―
―
100
―
―
45
―
―
30
―
nC
―
15
―
Min Typ. Max Unit
―
―
−14
A
―
―
−56
A
―
―
1.7
V
―
110
―
ns
― 0.18 ―
µC
2
2002-06-27
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