2SJ554 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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2SJ554

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SJ554

Main Characteristics

Power vs. Temperature Derating

200

150

100

50

0

50

100

150

200

Cace Temperature Tc (°C)

–1000

–100

–10

–1

Maximum Safe Operation Area

10

DCPWOp=e1r0amti1o(1m1ns0sh0otµ)s

µs

Operation in

this area is

limited by R DS(on)

–0.1 Ta = 25 °C

–0.1

–1

–10

Drain to Source Voltage V

–100

(V)

Typical Output Characteristics

–50

Pulse Test

–8 V

–40

–5 V

–3.5 V

–4 V

–30

VGS = –10 V

–3 V

–20

–10

–2.5 V

–2 V

0

–2 –4 –6 –8 –10

Drain to Source Voltage V DS(V)

Typical Transfer Characteristics

–50

VDS = –10 V

Pulse Test

–40

–30

–20

Tc = 75 °C

–10

25 °C

-25 °C

0

–1 –2 –3 –4 –5

Gate to Source Voltage V G(SV)

4

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