BF997 データシートの表示（PDF） - Philips Electronics
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BF997 Datasheet PDF : 5 Pages
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Philips Semiconductors
N-channel dual-gate MOS-FET
Product specification
BF997
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
IG1-SS
gate 1 cut-off current
IG2-SS
gate 2 cut-off current
V(BR)G1-SS gate 1-source breakdown voltage
V(BR)G2-SS gate 2-source breakdown voltage
V(P)G1-S gate 1-source cut-off voltage
V(P)G2-S gate 2-source cut-off voltage
IDSS
drain-source cut-off voltage
CONDITIONS
VG1-S = ±5 V; VG2-S = VDS = 0
VG2-S = ±5 V; VG1-S = VDS = 0
IG1-SS = ±10 mA; VG2-S = VDS = 0
IG2-SS = ±10 mA; VG1-S = VDS = 0
ID = 20 µA; VDS = 15 V; VG2-S = 4 V
ID = 20 µA; VDS = 15 V; VG1-S = 0
VDS = 15 V; VG2-S = 4 V; VG1-S = 0
MIN.
−
−
±6
±6
−
−
2
MAX.
±50
±50
±20
±20
−2.5
−2
20
UNIT
nA
nA
V
V
V
V
mA
DYNAMIC CHARACTERISTICS
Measuring conditions (common source): ID = 10 mA; VDS = 15 V; VG2-S = 4 V; Tamb = 25 °C.
SYMBOL
PARAMETER
CONDITIONS
MIN.
Yfs
Cig1-s
Cig2-s
Crs
Cos
F
Gp
transfer admittance
input capacitance at gate 1
input capacitance at gate 2
feedback capacitance
output capacitance
noise figure
power gain
f = 1 kHz
15
f = 1 MHz
−
f = 1 MHz
−
f = 1 MHz
−
f = 1 MHz
−
f = 200 MHz; GS = 2 mS; BS = BSopt
−
f = 200 MHz; GS = 2 mS; BS = BSopt;
−
GL = 0.5 mS; BL = BLopt
TYP.
18
2.5
1.2
25
1
1
25
UNIT
mS
pF
pF
fF
pF
dB
dB
April 1991
4
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