BFG67W データシートの表示（PDF） - Philips Electronics
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BFG67W Datasheet PDF : 16 Pages
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Philips Semiconductors
NPN 8 GHz wideband transistor
Product specification
BFG67W
BFG67W/X; BFG67W/XR
CHARACTERISTICS
Tj = 25 °C (unless otherwise specified).
SYMBOL
PARAMETER
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
hFE
fT
collector-base breakdown
voltage
collector-emitter breakdown
voltage
emitter-base breakdown
voltage
collector cut-off current
DC current gain
transition frequency
Cc
collector capacitance
Ce
emitter capacitance
Cre
feedback capacitance
GUM
maximum unilateral power
gain; note 1
F
noise figure
CONDITIONS
open emitter; IC = 10 µA; IE = 0
MIN. TYP. MAX. UNIT
−
−
20
V
open base; IC = 10 mA; IB = 0
−
−
10
V
open collector; IE = 10 µA; IC = 0 −
−
2.5 V
open emitter; VCB = 5 V; IE = 0
−
IC = 15 mA; VCE = 5 V
60
IC = 15 mA; VCE = 8 V; f = 500 MHz; −
Tamb = 25 °C
IE = ie = 0; VCE = 8 V; f = 1 MHz
−
IC = ic = 0; VEB = 0.5 V; f = 1 MHz −
IC = 0; VCE = 8 V; f = 1 MHz
−
IC = 15 mA; VCE = 8 V; f = 1 GHz; −
Tamb = 25 °C
IC = 15 mA; VCE = 8 V; f = 2 GHz; −
Tamb = 25 °C
Γs = Γopt; IC = 5 mA; VCE = 8 V;
−
f = 1 GHz
Γs = Γopt; IC = 15 mA; VCE = 8 V;
−
f = 1 GHz
Γs = Γopt; IC = 5 mA; VCE = 8 V;
−
f = 2 GHz
−
50
100 −
7.5
−
0.7
−
1.3
−
0.5
−
15.5 −
10
−
1.3
−
1.7
−
2.2
−
nA
GHz
pF
pF
pF
dB
dB
dB
dB
dB
Note
1. GUM is the maximum unilateral power gain, assuming s12 is zero.
GUM
=
10
log --(--1-----–------s---1---1----2s---)-2--1-(---1-2----–------s---2--2-----2---)-
dB.
August 1995
4
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