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2SK2084 データシートの表示(PDF) - Hitachi -> Renesas Electronics
部品番号
コンポーネント説明
メーカー
2SK2084
Silicon N-Channel MOS FET
Hitachi -> Renesas Electronics
2SK2084 Datasheet PDF : 10 Pages
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2SK2084(L), 2SK2084(S)
Body to Drain Diode Reverse
Recovery Time
200
100
50
di / dt = 20 A /
µ
s
V
GS
= 0, Ta = 25
°
C
20
10
0.1 0.2 0.5 1 2
5 10
Reverse Drain Current I
DR
(A)
10000
Typical Capacitance vs.
Drain to Source Voltage
1000
Ciss
Coss
100
V
GS
= 0
f = 1 MHz
Crss
10
0
4
8
12 16
20
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
50
20
40
V
DD
= 20 V
10 V
5V
30
V
DS
20
V
GS
16
12
8
10
V
DD
= 20 V
4
10 V
5V
0
0
8
16 24 32
40
Gate Charge Qg (nc)
Switching Characteristics
200
t
d(off)
100
50
V
GS
= 10 V
V
DD
= 20 V
PW = 5 µs
20
duty < 1 %
tf
tr
t
d(on)
10
0.1 0.2 0.5 1 2
5 10
Drain Current I
D
(A)
6
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