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2SK2225 データシートの表示(PDF) - Hitachi -> Renesas Electronics
部品番号
コンポーネント説明
メーカー
2SK2225
Silicon N-Channel MOS FET
Hitachi -> Renesas Electronics
2SK2225 Datasheet PDF : 9 Pages
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2SK2225
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
50
Pulse Test
40
I
D
= 3 A
30
20
2A
10
1A
0.5 A
0
4
8
12 16 20
Gate to Source Voltage V
GS
(V)
Static Drain to Source State Resistance
vs. Drain Current
50
20
V
GS
= 10 V
10
15 V
5
2
Pulse Test
1
0.5
0.1 0.2 0.5 1 2
5 10
Drain Current I
D
(A)
Static Drain to Source on State Resistance
vs. Temperature
20
I
D
= 2 A
16
12
0.5 A, 1 A
8
4
V
GS
= 15 V
Pulse Test
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
10
5
V
DS
= 25 V
Pulse Test
2
Tc = –25 °C
1
25 °C
75 °C
0.5
0.2
0.1
0.05 0.1 0.2 0.5 1 2
5
Drain Current I
D
(A)
4
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