2SK3418 データシートの表示（PDF） - Renesas Electronics

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2SK3418

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

2SK3418

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS(on) = 4.3 mΩ typ.

• Capable of 4 V gate drive

• High speed switching

Outline

TO-220AB

D

G

S

1

2

3

Absolute Maximum Ratings

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Avalanche current

Avalanche energy

Channel dissipation

Channel temperature

Storage temperature

Notes: 1. PW ≤ 10µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

Symbol

VDSS

VGSS

ID

ID (pulse)Note1

IDR

IAPNote3

EARNote3

PchNote2

Tch

Tstg

REJ03G0407-0200

(Previous ADE-208-941 (Z))

Rev.2.00

Sep.10.2004

1. Gate

2. Drain

(Flange)

3. Source

Ratings

60

±20

85

340

85

60

308

110

150

– 55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

A

mJ

W

°C

°C

Rev.2.00 Sep. 10, 2004 page 1 of 7

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