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2SK3511-S データシートの表示(PDF) - NEC => Renesas Technology

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2SK3511-S
NEC
NEC => Renesas Technology NEC
2SK3511-S Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2SK3511
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
25
Pulsed
20
15
10
5
0
-100
VGS = 10 V
ID = 42 A
-50 0 50 100 150 200
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
tf
100
tr
10
td(off)
td(on)
VDD = 38 V
VGS = 10 V
RG = 0
1
0.1
1
10
100
ID - Drain Current - A
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10000
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
Ciss
1000
100
Crss
Coss
VGS = 0 V
f = 1 MHz
10
0.1
1
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
10
VDD = 60 V
38 V
80
15 V
8
60
6
VGS
40
4
20
0
0
VDS
2
ID = 83 A
0
20 40 60 80 100 120
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs. DRAIN CURRENT
100
10
VGS = 10 V
1
0V
0.1
0.01
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VSD - Source to Drain Voltage - V
VGS = 0 V
di/dt = 100 A/ µs
10
0.1
1
10
100
IF - Drain Current - A
Data Sheet D15617EJ1V0DS
5

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