50MT060WH データシートの表示（PDF） - International Rectifier

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50MT060WH

"HALF-BRIDGE" IGBT MTP

International Rectifier 

50MT060WH

I27120 rev. D 02/03

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameters

Min Typ Max Units Test Conditions

V(BR)CES Collector-to-Emitter Breakdown Voltage 600

VCE(on) Collector-to-Emitter Voltage

VGE(th) Gate Threshold Voltage

3

ICES

Collector-to-Emiter Leaking

Current

VFM

Diode Forward Voltage Drop

IGES

Gate-to-Emitter Leakage Current

V

2.3 3.15

2.5 3.2

1.72 2.17

6

0.4 mA

10

1.58 1.80 V

1.49 1.68

1.9 2.17

± 250 nA

VGE = 0V, IC = 500µA

VGE = 15V, IC = 50A

VGE = 15V, IC = 100A

VGE = 15V, IC = 50A, TJ = 150°C

IC = 0.5mA

VGE = 0V, VCE = 600V

VGE = 0V, VCE = 600V, TJ = 150°C

IF = 50A, VGE = 0V

IF = 50A, VGE = 0V, TJ = 150°C

IF = 100A, VGE = 0V, TJ = 25°C

VGE = ± 20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameters

Min Typ Max Units Test Conditions

Qg

Qge

Qgc

Eon

Eoff

Ets

Eon

Eoff

Ets

Cies

Coes

Cres

trr

Irr

Qrr

trr

Irr

Qrr

Total Gate Charge (turn-on)

Gate-Emitter Charge (turn-on)

Gate-Collector Charge (turn-on)

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Diode Reverse Recovery Time

Diode Peak Reverse Current

Diode Recovery Charge

Diode Reverse Recovery Time

Diode Peak Reverse Current

Diode Recovery Charge

331 385

44 52

133 176

0.26

nC IC = 52A

VCC = 400V

VGE = 15V

mJ Internal gate resistors (see Electrical Diagram)

1.2

1.46

IC = 50A, VCC = 480V, VGE = 15V, L = 200µH

Energy losses include tail and diode reverse

recovery

0.73

mJ Internal gate resistors (see Electrical diagram)

1.66

2.39

IC = 50A, VCC = 480V, VGE = 15V, L = 200µH

Energy losses include tail and diode reverse

7100

510

140

recovery, TJ = 150°C

pF VGE = 0V

VCC = 30V

f = 1.0 MHz

82 97 ns VCC = 200V, IC = 50A

8.3 10.6 A di/dt = 200A/µs

340 514 nC

137 153 ns VCC = 200V, IC = 50A

12.7 14.8 A di/dt = 200A/µs

870 1132 nC TJ = 125°C

Thermistor Specifications

Parameters

Min Typ Max Units Test Conditions

R0 (1)

β (1) (2)

Resistance

Sensitivity index of the thermistor

material

(1) T0,T1 are thermistor's temperatures

2

30

kΩ T0 = 25°C

4000

K T0 = 25°C

T1 = 85°C

[ ( )] (2) R0 = exp β 1 1

R1

T0 T1

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