DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

74V1G07STR データシートの表示(PDF) - STMicroelectronics

部品番号
コンポーネント説明
メーカー
74V1G07STR
ST-Microelectronics
STMicroelectronics ST-Microelectronics
74V1G07STR Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
74V1G07
CAPACITIVE CHARACTERISTICS
Test Condition
Value
Symbol
Parameter
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
CIN Input Capacitance
4 10
10
10 pF
COUT
Output
Capacitance
5 10
10
10 pF
CPD Power Dissipation
3
pF
Capacitance
(note 1)
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC
TEST CIRCUIT
CL = 15/50pF or equivalent (includes jig and probe capacitance)
R1 = 1Kor equivalent
RT = ZOUT of pulse generator (typically 50)
WAVEFORM: PROPAGATION DELAY (f=1MHz; 50% duty cycle)
4/9

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]