FDG6332C データシートの表示（PDF） - Fairchild Semiconductor
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FDG6332C Datasheet PDF : 8 Pages
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September 2003
FDG6332C
20V N & P-Channel PowerTrench® MOSFETs
General Description
The N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
These devices have been designed to offer
exceptional power dissipation in a very small footprint
for applications where the bigger more expensive
TSSOP-8 and SSOP-6 packages are impractical.
Applications
• DC/DC converter
• Load switch
• LCD display inverter
Features
• Q1 0.7 A, 20V.
RDS(ON) = 300 mΩ @ VGS = 4.5 V
RDS(ON) = 400 mΩ @ VGS = 2.5 V
• Q2 –0.6 A, –20V.
RDS(ON) = 420 mΩ @ VGS = –4.5 V
RDS(ON) = 630 mΩ @ VGS = –2.5 V
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• SC70-6 package: small footprint (51% smaller than
SSOT-6); low profile (1mm thick)
S
G
D
Pin 1
D
G
S
SC70-6
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1)
– Pulsed
Power Dissipation for Single Operation
(Note 1)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.32
FDG6332C
7’’
1
6
2
5
3
4
Complementary
Q1
Q2
20
–20
±12
±12
0.7
–0.6
2.1
–2
0.3
–55 to +150
Units
V
V
A
W
°C
415
°C/W
Tape width
8mm
Quantity
3000 units
©2003 Fairchild Semiconductor Corporation
FDG6332C Rev C2 (W)
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