EMA302B データシートの表示（PDF） - Excelics Semiconductor, Inc.

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EMA302B

22-26 GHz Medium Power MMIC

Excelics Semiconductor, Inc. 

Excelics

EMA302B

PRELIMINARY DATA SHEET

22-26 GHz Medium Power MMIC

• 22-26 GHz BANDWIDTH

• +28.0 dBm TYPICAL OUTPUT POWER

• 15 dB ± 1.5 dB TYPICAL POWER GAIN

• TWO STAGE, INPUT PARTIALLY MATCHED,

OUTPUT MATCH OFF CHIP

• 0.3 MICRON RECESSED “MUSHROOM” GATE

• Si3N4 PASSIVATION

• ADVANCED EPITAXIAL HETEROJUNCTION

PROFILE PROVIDES EXTRA HIGH POWER

EFFICIENCY, AND HIGH RELIABILITY

ELECTRICAL CHARACTERISTICS1 (Ta = 25 OC)

165

85

65

50

50

325

95

425

900

Chip Thickness: 75 ± 13 microns

All Dimensions In Microns

SYMBOL

PARAMETERS/TEST CONDITIONS

MIN TYP MAX UNIT

F

Operating Frequency Range

22

26 GHz

P1dB

Ouput Power at 1dB Gain Compression

28

dBm

Gss

Small Signal Gain

15

dB

PAE

Power added efficiency at 1dB gain Compression

24

%

VSWR in Input VSWR

2.5:1

VSWR out Output VSWR

Ids1/Ids2 Drain Supply Currents for 1st & 2nd Stages

3.0:1

120/240

mA

Vdd

Power Supply Voltage

6

8

V

Rth

Thermal Resistance (Au-Sn Eutectic Attach)

18

oC/W

Note: 1. Specifications are based on device mounted in application circuit.

D.C. characteristics for 1st & 2nd FETs follow those of EPA080A and EPA160A, respectively.

MAXIMUM RATINGS AT 25OC

SYMBOLS PARAMETERS

ABSOLUTE2 CONTINUOUS3

Vds

Drain-Source Voltage

12V

8V

Vgs

Gate-Source Voltage

-8V

-3V

Ids1/Ids2 Drain Current

Idss

260 mA / 520 mA

Igsf1/Igsf2 Forward Gate Current

40 mA / 80 mA

7mA / 14 mA

Pin

Input Power

25dBm

Tch

Channel Temperature

175oC

Tstg

Storage Temperature

-65/175oC

@3dB Compression

150oC

-65/150oC

Pt

Total Power Dissipation

7.5 W

6.3 W

Note: 2. Exceeding any of the above ratings may result in permanent damage.

3. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

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