EMA302B データシートの表示（PDF） - Excelics Semiconductor, Inc.
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EMA302B Datasheet PDF : 4 Pages
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EMA302B
PRELIMINARY DATA SHEET
22-26 GHz Medium Power MMIC
APPLICATION HINTS
The device should be die attached with Gold-Tin eutectic. Epoxy die attach is not recommended. Thermocompression
bonding of .7 mil to 1 mil diameter gold wire is recommended.
The EMA302B is partially input matched. Some input match and the output match must be provided off-chip. This
allows the use of optimal materials for matching networks to minimize loss, and provides for flexibility to optimize the
match for the application frequency. Typically the bond wire inductance will form part of the matching network, so bond
wire lengths must be controlled and repeatable.
The sources of the transistors are directly via-hole grounded. A negative voltage is required to bias the gates of the
transistors. The gate voltage for the input stage must be provided at the RF input bonding pad, and the drain current for
the output stage must be provided through the output bonding pad. Appropriate bias networks must be provided off chip.
Typically a quarter wave microstrip line or bond wire will suffice. Adequate DC blocking and bypassing must also be
provided. A series resistance of about 50 ohms is recommended in the gate DC bias circuit of each FET to limit gate
current and suppress low frequency oscillations. The drain bias circuits should be well bypassed down to MHz
frequencies to prevent oscillations. Some isolation should be provided between the two drain circuits at GHz frequencies
to prevent oscillations. Although there is some bypassing on chip of the VD1 and VG2 terminals, additional bypass
capacitors, placed close to the chip, are recommended.
The gate and drain power supplies should be sequenced to turn on the negative gate voltage before the positive drain
voltage is applied. Turning on the full drain voltage before the gate voltage can cause excessive power dissipation or
destructive oscillations.
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