UPD43256BGU-A10-A データシートの表示（PDF） - NEC => Renesas Technology

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UPD43256BGU-A10-A

256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT 85ns

NEC => Renesas Technology 

μPD43256B

Write Cycle Timing Chart 1 (/WE Controlled)

Address (Input)

/CS (Input)

/WE (Input)

I/O (Input / Output)

tWC

tCW

tAW

tAS

tWP

tWR

tWHZ

Indefinite data out

High

impe-

dance

tOW

tDW

tDH

Data in

High

impe-

dance

Indefinite data out

Cautions 1. /CS or /WE should be fixed to high level during address transition.

2. When I/O pins are in the output state, therefore the input signals must not be applied to

the output.

Remarks 1. Write operation is done during the overlap time of a low level /CS and a low level /WE.

2. When /WE is at low level, the I/O pins are always high impedance. When /WE is at high level,

read operation is executed. Therefore /OE should be at high level to make the I/O pins high

impedance.

3. If /CS changes to low level at the same time or after the change of /WE to low level, the I/O

pins will remain high impedance state.

Data Sheet M10770EJEV0DS

15

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