HN29W25611T-50 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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HN29W25611T-50

256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)

Hitachi -> Renesas Electronics 

HN29W25611 Series

Program, Erase and Erase Verify

Parameter

Symbol Min Typ Max Unit Test conditions

Write cycle time

t CWC

120 —

—

ns

Serial clock cycle time

t SCC

50

—

—

ns

CE setup time

t CES

0

—

—

ns

CE hold time

t CEH

0

—

—

ns

Write pulse time

t WP

60

—

—

ns

Write pulse high time

t WPH

40

—

—

ns

Address setup time

t AS

50

—

—

ns

Address hold time

t AH

10

—

—

ns

Data setup time

t DS

50

—

—

ns

Data hold time

t DH

10

—

—

ns

OE setup time before command tOEWS

0

write

—

—

ns

OE setup time before status

t OEPS

40

—

—

ns

polling

OE setup time before read

t OER

Time to device busy

t DB

Time to device busy on read tDBR

mode

250 —

—

—

—

—

—

ns

150 ns

1

µs

Auto erase time

Auto program time

Program(1), (3)

t ASE

—

1.5 5.0 ms

t ASP

—

3.0 20.0 ms

Program(2)

Program(4),

Data recovery write

t ASP

—

2.5 20.0 ms

t ASP

—

3.5 30.0 ms

WE to SC delay time

WE to SC delay time on

recovery read mode

t WSD

50

—

—

µs

t WSDR

2

—

—

µs

CE pulse high time

SC pulse width

SC pulse low time

Data setup time for SC

Data hold time for SC

SC setup for WE

SC setup for CE

SC hold time for WE

CE to output delay

t CPH

t SP

t SPL

t SDS

t SDH

t SW

t SCS

t SCHW

t CE

200 —

20

—

20

—

0

—

30

—

50

—

0

—

20

—

—

—

—

ns

—

ns

—

ns

—

ns

—

ns CDE = VIL

—

ns

—

ns

—

ns

120 ns

Note

21

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