AO4613 データシートの表示（PDF） - Alpha and Omega Semiconductor

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AO4613

Complementary Enhancement Mode Field Effect Transistor

Alpha and Omega Semiconductor 

AO4613

P-Channel Electrical Characteristics (T J=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

IGSS

VGS(th)

ID(ON)

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

RDS(ON) Static Drain-Source On-Resistance

ID=-250µA, VGS=0V

VDS=-24V, VGS=0V

VDS=0V, VGS=±20V

VDS=VGS ID=-250µA

VGS=-10V, VDS=-5V

VGS=-10V, ID=-6.1A

-30

TJ=55°C

-1

30

TJ=125°C

VGS=-4.5V, ID=-4A

gFS

Forward Transconductance

VDS=-5V, ID=-6.1A

VSD

Diode Forward Voltage

IS=-1A,VGS=0V

IS

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=-15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS

Qg(10V) Total Gate Charge (10V)

Qg(4.5V) Total Gate Charge (4.5V)

Qgs

Gate Source Charge

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time

Qrr

Body Diode Reverse Recovery Charge

VGS=-10V, VDS=-15V, ID=-6.1A

VGS=-10V, VDS=-15V, RL=2.5Ω,

RGEN=3Ω

IF=-6.1A, dI/dt=100A/µs

IF=-6.1A, dI/dt=100A/µs

Typ Max Units

V

-1

µA

-5

10

µA

-1.7 -3

V

A

28

37

mΩ

39

48

45

60 mΩ

12.5

S

-0.77 -1

V

3

A

1040 1250 pF

179

pF

134

pF

5

10

Ω

16.8 22

nC

8.7

12

nC

3.4

nC

5

nC

9

12

ns

5.7

11

ns

22.7 30

ns

10.2 20

ns

21.7 27

ns

13.6 18

nC

A: The value of RθθJJAA is measured with the device mounted on 1in22 FR-4 board with 2oz. Copper, in a still air environment with TAA =25°C. The value in

vaanlyueginveannyapapglicivaetnionapdpelipceantidosn odneptheendusseorn'sthspeeucsifeicr'sbosapredcidfiecsbigona.rdThdeesciugrnre. nTthreatcinugrreisntbraasteindgoisn bthaeset≤d 1o0nsththeetr≤m1a0lsrethsiesrtmanaclerersaitsintagn.ce rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θθJJAA is the sum of the thermal impedence from junction to lead RθθJJLL and lead to ambient. RθJL and RθJC are equivalent terms referring to

tDh.eTrmhealsrteastiicstcahnacreacfrtoemrisjtuicnsctinionFigtourdersai1n tleoa6d,.12,14 are obtained using 80µs pulses, duty cycle 0.5% max.

DE.. TThheessetateticstcshaarreacpteerrfiosrtmicsedinwFitighutrheesd1etvoic6e,1m2o,1u4ntaerdeoonbt1aiinne2 dFRus-4inbgo8a0rµdswpiuthls2eosz, .dCutoypcpyecrl,ein0.a5%stilml aairx.environment

Ecu. rTvheepsreovteidsetss aaresinpgelrefoprmulesed rwaittihngth. e device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment

with

with

TA=25°C.

TA=25°C.

The

The

SOA

SOA

curve

provides a single pulse rating.

F. Rev 0: August 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

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