AO4622 データシートの表示（PDF） - Alpha and Omega Semiconductor
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AO4622 Datasheet PDF : 9 Pages
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AO4622
20V Dual P + N-Channel MOSFET
General Description
The AO4622 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low gate
charge. The complementary MOSFETs may be used
to form a level shifted high side switch, and for a
host of other applications.
Product Summary
N-Channel
P-Channel
VDS (V) = 20V
-20V
ID = 7.3A (VGS=4.5V) -5A (VGS=-4.5V)
RDS(ON)
RDS(ON)
< 23mΩ (VGS=10V)
< 53mΩ (VGS = -4.5V)
< 30mΩ (VGS=4.5V) < 87mΩ (VGS = -2.5V)
< 84mΩ (VGS=2.5V)
100% UIS Tested
100% Rg Tested
100% UIS Tested
100% Rg Tested
Top View
SOIC-8
Bottom View
Pin1
Top View
S1
D1
G1
D1
S2
D2
G2
D2
D1
G1
G2
S1
n-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±16
Continuous Drain TA=25°C
7.3
Current AF
TA=70°C
ID
6.2
Pulsed Drain Current B
IDM
35
Power Dissipation
TA=25°C
TA=70°C
PD
Avalanche Current B
IAR
Repetitive avalanche energy 0.3mH B
EAR
2
1.44
13
25
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Max p-channel
-20
±12
-5
-4.2
-25
2
1.44
13
25
-55 to 150
D2
S2
p-channel
Units
V
V
A
W
A
mJ
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
Device
Typ
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
RθJA
n-ch
n-ch
48
74
Maximum Junction-to-Lead C
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Steady-State
t ≤ 10s
Steady-State
RθJL
n-ch
35
RθJA
p-ch
p-ch
48
74
Maximum Junction-to-Lead C
Steady-State
RθJL
p-ch
35
Max
Units
62.5
°C/W
110
°C/W
40
°C/W
62.5
°C/W
110
°C/W
40
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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