AP2213M-3.0TRE1 データシートの表示（PDF） - BCD Semiconductor
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AP2213M-3.0TRE1 Datasheet PDF : 22 Pages
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500mA LOW NOISE LDO REGULATOR
Typical Performance Characteristics (Continued)
Data Sheet
AP2213
13
12
11
10
9
8
7
6
5
4
3
2
-60 -40 -20
AP2213-2.5, V =3.5V
IN
CIN=1µF, COUT=2.2µF, IOUT=100µA
VEN=1.8V
VEN=2V
VEN=3V
VEN=3.7V
0
20 40 60 80
Junction Temperature (oC)
100 120 140
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-60 -40 -20
AP2213-2.5
CIN=1µF, COUT=2.2µF
IOUT=100µA,
V =3.5V
IN
V =logic high
EN
V =logic low
EN
0 20 40 60 80
Junction Temperature (oC)
100 120 140
Figure 8. Enable Current vs. Junction Temperature
Figure 9. Enable Voltage vs. Junction Temperature
200
150
100
50
0
10
I =10mA
OUT
C =1µF, C =2.2µF
IN
OUT
Noise Measurement Filter: DIN Noise
100
1000
Bypass Capacitor (pF)
10000
100
AP2213-2.5
10
IOUT=10mA, CIN=1µF, COUT=2.2µF
V =3.5V, C =100pF
IN
BYP
1
0.1
0.01
0.001
0.0001
10
100
1k
10k
100k
1M
10M
Frequency (Hz)
Figure 10. Noise vs. Bypass Capacitor
Figure 11. Output Noise vs. Frequency
Nov. 2009 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
13
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