AP2213M-3.3E1 データシートの表示（PDF） - BCD Semiconductor
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AP2213M-3.3E1 Datasheet PDF : 22 Pages
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500mA LOW NOISE LDO REGULATOR
Typical Performance Characteristics (Continued)
Data Sheet
AP2213
1
0.5
0
10mA
-0.5
AP2213-2.5
0
-10
-20
-30
Time (200µs/Div)
Figure 12. Load Transient
(Conditions: VIN=3.5V, CBYP=100pF, VEN=2V,
IOUT=10 to 500mA, CIN=1µF, COUT=2.2µF)
5.5
4.5
AP2213-2.5
3.5
2.5
10
0
-10
-20
Time (200µs/Div)
Figure 13. Line Transient
(Conditions: VIN=3.4 to 4.4V, VEN=2V, IOUT=100µA,
CBYP=100pF, COUT=2.2µF)
3
AP2213-2.5
2
1
0
2
1
0
-1
Time (40µs/Div)
Figure 14. VEN vs. VOUT
(Conditions: VEN=0 to 2V, VIN=3.5V, IOUT=30mA,
CBYP=open, CIN=1µF, COUT=2.2µF)
100
90
AP2213-2.5
V =3.5V, V =1V
IN
RIPPLE
PP
80
I =10mA, C =2.2µF
OUT
OUT
70
60
50
40
30
20
10
0
10
100
1k
10k
100k
1M
Frequency (Hz)
Figure 15. PSRR vs. Frequency
Nov. 2009 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
14
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