AP2161D データシートの表示（PDF） - Diodes Incorporated.
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AP2161D Datasheet PDF : 19 Pages
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AP2161D/AP2171D
Electrical Characteristics (@TA = +25°C, VIN = +5.0V, unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
VUVLO Input UVLO
1.6
1.9
2.5
V
ISHDN Input Shutdown Current
Disabled, IOUT = 0
0.5
1
µA
IQ Input Quiescent Current
Enabled, IOUT = 0
45
70
µA
ILEAK Input Leakage Current
Disabled, OUT grounded
0.1
1
µA
IREV Reverse Leakage Current
Disabled, VIN = 0V, VOUT = 5V, IREV at VIN
0.1
1
µA
RDS(ON) Switch On-Resistance
VIN = 5V,
IOUT= 1A
SOT25, MSOP-8,
TA = +25°C MSOP-8EP, SO-8
U-DFN2018-6
-40°C ≤ TA ≤ +85°C
95
115
90
110
140
mΩ
VIN = 3.3V, IOUT= TA = +25°C
1A
-40°C ≤ TA ≤ +85°C
120
140
170
ISHORT Short-Circuit Current Limit
ILIMIT Over-Load Current Limit
Enabled into short circuit, CL = 22µF
1.2
A
VIN = 5V, VOUT = 4.0V, CL = 120µF, -40°C ≤ TA ≤ +85°C
1.1
1.5
1.9
A
ITrig Current Limiting Trigger Threshold Output Current Slew rate (<100A/s) , CL = 22µF
2.0
A
VIL EN Input Logic Low Voltage
VIN = 2.7V to 5.5V
0.8
V
VIH EN Input Logic High Voltage
VIN = 2.7V to 5.5V
2
V
ISINK
TD(ON)
TR
TD(OFF)
TF
RFLG
EN Input Leakage
Output Turn-On Delay Time
Output Turn-On Rise Time
Output Turn-Off Delay Time
Output Turn-Off Fall Time
FLG Output FET On-Resistance
VEN = 5V
CL = 1µF, RLOAD = 10Ω
CL = 1µF, RLOAD = 10Ω
CL = 1µF, RLOAD = 10Ω
CL = 1µF, RLOAD = 10Ω
IFLG = 10mA
1
µA
0.05
ms
0.6
1.5
ms
0.05
ms
0.05
0.1
ms
20
40
Ω
TBlank FLG Blanking Time
RDIS Discharge Resistance (Note 5)
CIN = 10µF, CL = 22µF
VIN = 5V, disabled, IOUT = 1mA
4
7
15
ms
100
Ω
TDIS Discharge Time
TSHDN Thermal Shutdown Threshold
CL = 1µF, VIN = 5V, disabled to VOUT < 0.5V
Enabled, RLOAD = 1kΩ
0.6
ms
140
°C
THYS Thermal Shutdown Hysteresis
25
°C
SOT25 (Note 6)
170
SO-8 (Note 6)
θJA
Thermal Resistance Junction-to-
Ambient
MSOP-8 (Note 6)
MSOP-8EP (Note 7)
127
118
°C/W
67
U-DFN2018-6 (Note 7)
70
Notes:
5. The discharge function is active when the device is disabled (when enable is de-asserted). The discharge function offers a resistive discharge path
for the external storage capacitor.
6. Device mounted on FR-4 4 substrate PCB, 2oz copper, with minimum recommended pad layout.
7. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground
plane.
AP2161D/AP2171D
Document number: DS32250 Rev. 5 - 2
4 of 19
www.diodes.com
March 2013
© Diodes Incorporated
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