APM2322A データシートの表示（PDF） - Anpec Electronics

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APM2322A

N-Channel Enhancement Mode MOSFET

Anpec Electronics 

APM2322A

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol

Parameter

VDSS

VGSS

ID*

IDM*

IS*

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

300µs Pulsed Drain Current

Diode Continuous Forward Current

VGS=4.5V

TJ

TSTG

Maximum Junction Temperature

Storage Temperature Range

PD* Maximum Power Dissipation

RθJA* Thermal Resistance-Junction to Ambient

Note:

*Surface Mounted on 1in2 pad area, t ≤ 10sec.

TA=25°C

TA=100°C

Rating

20

±8

1.5

6

1

150

-55 to 150

0.83

0.3

150

Unit

V

A

A

°C

W

°C/W

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol

Parameter

Test Condition

Static Characteristics

BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA

IDSS Zero Gate Voltage Drain Current VDS=16V, VGS=0V

TJ=85°C

VGS(th) Gate Threshold Voltage

VDS=VGS, IDS=250µA

IGSS Gate Leakage Current

VGS=±8V, VDS=0V

RDS(ON) a Drain-Source On-state Resistance VGS=4.5V, IDS=1.5A

VGS=2.5V, IDS=0.8A

VSDa Diode Forward Voltage

ISD=0.5A, VGS=0V

Gate Charge Characteristics b

Qg Total Gate Charge

Qgs Gate-Source Charge

Qgd Gate-Drain Charge

VDS=15V, VGS=10V,

IDS=1.5A

APM2322A

Unit

Min. Typ. Max.

20

V

1

µA

30

0.5 0.7 1

V

±100 nA

195 260

mΩ

295 350

0.8 1.3 V

1.4 1.8

0.2

nC

0.3

Copyright  ANPEC Electronics Corp.

2

Rev. B.1 - Mar., 2005

www.anpec.com.tw

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